Yangzhou Yangjie 2N7002KCW
The information presented in this document is for reference only. This publication supersedes & replaces all information previously supplied.| Part No. | 2N7002KCW |
|---|---|
| Datasheet | 2N7002KCW Download |
| Manufacturer |  Yangzhou Yangjie |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
● Trench Power MV MOSFET technology● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
APPLICATIONS
● Battery operated systems● Solid-state relays
● Direct logic-level interface：TTL/CMOS
●
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current TA=70℃ @ Steady State ID Pulsed Drain Current A IDM ±20 V 300 mA 240 1.5 A Total Power Dissipation @ TA=25℃ PD 300 mW Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 416 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃● Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 2N7002KCW F2 72KC. 3000 30000 120000 7“ reel S-E112 Rev.1.1,24-Oct-22 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
