Datasheet Details
| Part number | 2N7002KCW |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 565.84 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | 2N7002KCW-YangzhouYangjie.pdf |
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Overview: 2N7002KCW RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 300mA ＜2.5ohm ＜3.
| Part number | 2N7002KCW |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 565.84 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | 2N7002KCW-YangzhouYangjie.pdf |
|
|
|
● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage ● Moisture Sensitivity Level 1 ● Epoxy Meets UL 94 V-0 Flammability Rating ● Halogen Free Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS TA=25℃ @ Steady State Drain Current TA=70℃ @ Steady State ID Pulsed Drain Current A IDM ±20 V 300 mA 240 1.5 A Total Power Dissipation @ TA=25℃ PD 300 mW Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 416 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 2N7002KCW F2 72KC.
3000 30000 120000 7“ reel S-E112 Rev.1.1,24-Oct-22 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com 2N7002KCW ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS VGS(th) VGS= 0V, ID=250μA VDS=60V,VGS=0V VGS= ±20V, VDS=0V VDS= VGS, ID=250μA Static Drain-Source On-Resistance Diode Forward Voltage RDS(ON) VSD VGS= 10V, ID=300mA VGS= 4.5V, ID=200mA IS=300mA,VGS=0V Maximum Body-Diode Continuous Current IS Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss VDS=30V,VGS=0V,f=1MHZ Reverse Transfer Capacitance Crss Switching
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N7002KC | MOSFET | Silikron |
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2N7002K | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES |
 |
2N7002K | N-channel MOSFET | Kexin |
 |
2N7002K | N-Channel MOSFET | MCC |
 |
2N7002K | N-Channel Enhancement Mode Power MOSFET | WEITRON |
| Part Number | Description |
|---|---|
| 2N7002KCWQ | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KC | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCDWQ | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCE | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002K | N-channel MOSFET |
| 2N7002KDW | N-Channel Enhancement Mode Field Effect Transistor |