2N7002KCDWQ - N-Channel Enhancement Mode Field Effect Transistor

Yangzhou Yangjie

General Description

Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage

Part no.

Battery operated systems Solid-state relays

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2N7002KCDWQ n-channel enhancement mode field effect transistor by Yangzhou Yangjie - Datasheet Preview

Datasheet Details

Part number	2N7002KCDWQ
Manufacturer	Yangzhou Yangjie
File Size	466.98 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	2N7002KCDWQ Datasheet

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2N7002KC	N-Channel Enhancement Mode Field Effect Transistor
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2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.5ohm ● RDS(ON)( at VGS=4.5V) ＜3.0ohm ● ESD Protected Up to 2.0KV (HBM) General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage ● Part no.