Datasheet Details
| Part number | 2N7002KCDWQ |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 466.98 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | 2N7002KCDWQ-YangzhouYangjie.pdf |
|
|
Overview: 2N7002KCDWQ RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.5ohm ● RDS(ON)( at VGS=4.5V) ＜3.0ohm ● ESD Protected Up to 2.
| Part number | 2N7002KCDWQ |
|---|---|
| Manufacturer | Yangjie Electronic |
| File Size | 466.98 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | 2N7002KCDWQ-YangzhouYangjie.pdf |
|
|
|
● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage ● Part no.
with suffix “Q” means AEC-Q101 qualified Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current A TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range VDS VGS ID IDM PD RθJA TJ ,TSTG 60 ±20 300 240 1.5 300 416 -55～+150 V V mA A mW ℃/ W ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 2N7002KCDWQ F2 72KC 3000 30000 120000 7“ reel S-S3917 Rev.1.0,15-Jun-21 1/6 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com 2N7002KCDWQ ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Dynamic Parameters VGS= 0V, ID=250μA VDS=60V,VGS=0V VGS= ±20V, VDS=0V VDS= VGS, ID=250μA VGS= 10V, ID=300mA VGS= 4.5V, ID=200mA IS=300mA,VGS=0V Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Parameters Ciss Coss VDS=30V,VGS=0V,f=1MHZ Crss Total Gate Charge Qg VGS=10V,VDS=30V,ID=0.3
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N7002KC | MOSFET | Silikron |
 |
2N7002K | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES |
 |
2N7002K | N-channel MOSFET | Kexin |
 |
2N7002K | N-Channel MOSFET | MCC |
 |
2N7002K | N-Channel Enhancement Mode Power MOSFET | WEITRON |
| Part Number | Description |
|---|---|
| 2N7002KC | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCE | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCW | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002KCWQ | N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002K | N-channel MOSFET |
| 2N7002KDW | N-Channel Enhancement Mode Field Effect Transistor |