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2N7002KW - N-channel MOSFET

Key Features

  • RDS(ON), VGS@10V, IDS@500mA=3.
  • RDS(ON), VGS@4.5V, IDS@200mA=4.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Very Low Leakage Current In Off Condition.
  • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers：Relays, Displays, Lamps, Solenoids, Memories, etc.
  • ESD Protected 2KV HBM.
  • In compliance with EU RoHS 2002/95/EC directives.

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📁 Similar Datasheet

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2N7002KW N-Channel FET MCC
2N7002KW N-Channel FET ON Semiconductor

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
2N7002K N-channel MOSFET
2N7002KDW Dual N-Channel MOSFET
2N7002KG N-Ch Small Signal MOSFET
2N7002T Small Signal MOSFET
2N7002W Small Signal MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 2N7002KW 115mA , 60V, RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  RDS(ON), VGS@10V, IDS@500mA=3  RDS(ON), VGS@4.5V, IDS@200mA=4  Advanced Trench Process Technology  High Density Cell Design For Ultra Low On-Resistance  Very Low Leakage Current In Off Condition  Specially Designed for Battery Operated Systems, Solid-State Relays Drivers：Relays, Displays, Lamps, Solenoids, Memories, etc.