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Elektronische Bauelemente
2N7002T
115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET
RoHS Compliant Product
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–523
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage
– Continuous – Non–repetitive (tp ≤ 50 µs)
Symbol Value Unit
VDSS
60
Vdc
VDGR
60
Vdc
VGS
±ā20
Vdc
VGSM
±ā40
Vpk
N–Channel 3
1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol Max Unit
PD
150
mW
1.8 mW/°C
RθJA TJ, Tstg
833
–ā55 to +150
°C/W °C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2.
2N7002T Datasheet
