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2N7002T Datasheet PDF

SeCoS Halbleitertechnologie GmbH 2N7002T

Small Signal MOSFET

Part No. 2N7002T
Datasheet 2N7002T Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description Small Signal MOSFET
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2N7002T datasheet page 1 preview

MAXIMUM RATINGS

Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Symbol Value Unit VDSS 60 Vdc VDGR 60 Vdc VGS ±ā20 Vdc VGSM ±ā40 Vpk N–Channel 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 150 mW 1.8 mW/°C RθJA TJ, Tstg 833 –ā55 to +150 °C/W °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. SOT-523 Dim Min Max A 1.500 1.700 B 0.750 0.850 C 0.600 0.900 D 0.150 0.300 G 0.900 1.100 H 0.000 0.100 J 0.100 0.200 K 0.100 0.300 L 0.400 0.600 S 1.450 1.750 V 0.250 0.350 All Dimension in mm 01-Jun-2002 Rev. A A L 3 BS 1 2 V G C D H 2 3 1 2 2 SOT–523 MARKING DIAGRAM & PIN ASSIGNMENT Dr...
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