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2N7002T Datasheet PDF

Diodes Incorporated 2N7002T

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Part No. 2N7002T
Datasheet 2N7002T Download
Manufacturer
Diodes Incorporated
Description N-Channel MOSFET
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2N7002T datasheet page 1 preview

FEATURES

BVDSS 60V RDS(ON) 7.5Ω @ VGS = 5V ID TA = +25°C 115mA

DESCRIPTION

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APPLICATIONS

● DC-DC Converters
● Power Management Functions
● Battery Operated Systems and Solid-State Relays
● Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
● Low On-Resistance
● Low Gate Threshold Voltage
● Low Input Capacitance
● Fast Switching Speed
● Low Input/Output Leakage
● Ultra-Small Surface Mount Package
● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
● Halogen and Antimony Free. “Green” Device (Note 3)
● For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative.

MECHANICAL DATA

● Case: SOT523
● Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0
● Moisture Sensitivity: Level 1 per J-STD-020
● Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating).
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