Unisonic Technologies 2N7002T
The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.| Part No. | 2N7002T |
|---|---|
| Datasheet | 2N7002T Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●FEATURES
* High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Package 2N7002TG-AN3-R SOT-523 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 SGD Packing Tape Reel
● MARKING Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-542.C 2N7002T Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V Gate Source Voltage Continuous Non Repetitive(tp<50μs) VGSS 20 40 V Drain Current Continuous Pulsed ID 300 800 mA Power Dissipation Derated Above 25°C PD 200 mW 1.6 mW/°C Junction Temperature TJ + 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
