Key Features
- RDS(ON), VGS@10V, ID@500mA<3Ω
- RDS(ON), VGS@4.5V, ID@200mA<4Ω
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Very Low Leakage Current In Off Condition
- Specially Designed for Battery Operated Systems, Solid- State Relays Drivers: Relay, Displays, Memories, etc
- ESD Protected 2KV HBM
- AEC-Q101 qualified
- Lead free in compliance with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard Mechanical Data
Datasheets by Manufacturer
- 2N7002KW — SeCoS Halbleitertechnologie GmbH — N-channel MOSFET
- 2N7002KW — JCET — N-Channel MOSFET
- 2N7002KW — onsemi — N-Channel FET
- 2N7002KW — Unisonic Technologies — N-CHANNEL POWER MOSFET
- 2N7002KW — Micro Commercial Components — N-Channel FET
- 2N7002KDW — SeCoS Halbleitertechnologie GmbH — Dual N-Channel MOSFET
- 2N7002K — onsemi — Small-Signal MOSFET
- 2N7002K — SeCoS Halbleitertechnologie GmbH — N-channel MOSFET
- 2N7002KG8 — Silikron — MOSFET
- 2N7002KDW — Micro Commercial Components — Dual N-Channel MOSFET
