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2N7002TB - 60V N-Channel MOSFET

Key Features

  • RDS(ON), VGS@10V,IDS@500mA=5Ω.
  • RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
  • Lead free in compliance with EU RoHS 2011/65/EU directive.
  • Green molding compound as per IEC61249 Std. . (Halogen Free).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002TB 60V N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@50mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std.. (Halogen Free) MECHANICAL DATA • Case: SOT-523, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.00007 ounce, 0.