2N7002TB Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@500m A=5Ω - RDS(ON), VGS@4.5V,IDS@50m A=7.5Ω - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std.. (Halogen Free) MECHANICAL DATA - Case: SOT-523, Plastic - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.00007 ounce, 0.002 gram - Marking: 72 3 D GS 12 Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted ) Drain-Source Voltage PARAMETER Gats-Source Voltage Continous Drain Current Pulsed Drain Current (1) Maximum Power Dissipation Junction-to Ambient Thermal Resistance (PCB mounted)2 Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e TA=25o C TA=75o C SYMBOL VDS VGS ID I DM PD RΘJA TJ,TSTG LIMIT 60 +20 800 150 90 833 -55 to 150 UNITS V V m A m A m W o C/W o C Note:1.Maximum DC current limited by the package 2.Surface mounted on FR4 board,t<10 sec 3.Pulse width<300us, Duty cycle<2% May 13,2015-REV.02 PAGE . 1 ELECTRICAL CHARACTERISTICS Static PARAMETER Drain-Source Breakdown Voltage S YMB...