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2N7002K - N-channel MOSFET

Key Features

  • RDS(ON), VGS@10V,IDS@500mA=3Ω.
  • RDS(ON), VGS@4.5V,IDS@200mA=4Ω.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Very Low Leakage Current In Off Condition.
  • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
  • ESD Protected 2KV HBM.
  • In compliance with EU RoHS 2002/95/EC directives.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • In compliance with EU RoHS 2002/95/EC directives MECHANICALDATA • Case: SOT-23 Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : K72 • Approx. Weight: 0.