2N7002KW Description
2N7002KW N-Channel Enhancement Mode Field Effect Transistor.
2N7002KW Key Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package
- These Devices are Pb-Free and are RoHS pliant
- ESD HBM = 1000 V as per JESD22 A114 and ESD CDM = 1500 V