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Field Effect Transistor N-Channel, Enhancement Mode
2N7002DW
Features
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain-Source Voltage
60
V
VDGR Drain-Gate Voltage (RGS 1.0 MW)
60
V
VGSS Gate-Source Voltage
Continuous
20
V
Pulsed
40
ID
Drain Current
Continuous
115
mA
Continuous
73
at 100 C
Pulsed
800
TJ, TSTG Junction and Storage Temperature Range −55 to
C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
2N7002DW Datasheet
