• Part: 2N7002T
  • Description: N-Channel FET
  • Manufacturer: onsemi
  • Size: 167.78 KB
Download 2N7002T Datasheet PDF
onsemi
2N7002T
Features - Low On- Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Ultra- Small Surface Mount Package - This Device is Pb- Free and are Ro HS pliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage Drain- Gate Voltage RGS ≤ 1.0 MW Gate- Source Voltage Continuous Pulsed VDSS VDGR VGSS ±20 ±40 Gate- Source Voltage Continuous Continuous at 100°C Pulsed ID m A Junction Temperature Range Storage Temperature Range °C TSTG - 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Max Unit Total Device Dissipation Derating above TA =...