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2N7002DWQ - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

Motor control Power management functions SOT363 2N7002DWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen- and Antimony-Free. “Green” Device (Note 3).
  • The 2N7002DWQ is suitable for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary BVDSS 60V RDS(ON) Max 7.5Ω @ VGS = 5V ID Max TA = +25°C 0.23A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  Motor control  Power management functions SOT363 2N7002DWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen- and Antimony-Free.