Kexin Electronics 2N7002DW
Dual N-Channel MOSFET
FEATURES
● VDS (V) = 60V● ID = 115 mA (VGS = 10V)
● RDS(ON) < 7.5 Ω (VGS = 5V)
● Low Input Capacitance
● Fast Switching Speed
● Low On-Resistance MOSFET 1.S2 4.S1 2.G2 5.G1 3.D1 6.D2
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage @ RGS ≤ 1MΩ Gate-Source Voltage Continuous Pulsed Continuous Continuous Drain Current Continuous @ 100°C Pulsed Power Dissipation Derating above Ta = 25°C Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VDG VGS ID PD RthJA TJ Tstg Rating 60 60 ±20 ±40 115 73 800 200 1.6 625 150 -55 to 150 Unit V mA mW mW/℃ ℃/W ℃ 1 SMD Type Dual N-Channel MOSFET 2N7002DW●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTim...