2N7002DW Datasheet | Kexin Semiconductor

Features - VDS (V) = 60V - ID = 115 m A (VGS = 10V) - RDS(ON) ＜ 7.5 Ω (VGS = 5V) - Low Input Capacitance - Fast Switching Speed - Low On-Resistance MOSFET 1.S2 4.S1 2.G2 5.G1 3.D1 6.D2 - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage @ RGS ≤ 1MΩ Gate-Source Voltage Continuous Pulsed Continuous Continuous Drain Current Continuous @ 100°C Pulsed Power Dissipation Derating above Ta = 25°C Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VDG VGS PD Rth JA TJ Tstg Rating 60 60 ±20 ±40 115 73 800 200 1.6 625 150 -55 to 150 Unit V m A m W m W/℃ ℃/W ℃ .kexin..cn 1 SMD Type Dual N-Channel MOSFET 2N7002DW - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source...