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2N7002DW - N-channel FET

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Lead Free/RoHS Compliant SC70-6 (SOT 363) D2 G1 S1 1 Marking : 2N Ordering Information Part Number 2N7002DW Top Mark 2N 1 S2 G2 D1 Package SC70 6L Packing Method Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ra.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant SC70-6 (SOT 363) D2 G1 S1 1 Marking : 2N Ordering Information Part Number 2N7002DW Top Mark 2N 1 S2 G2 D1 Package SC70 6L Packing Method Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.