2N7002DW Datasheet | Slkor Micro Semicon

N-Channel Enhancement Mode Field Effect Transistor TR1 TR2 1.Source 2. Gate 3. Drain 4. Source 5. Gate 6. Drain Simplified outline(SOT-363) Absolute Maximum Ratings (Ta = 25℃) Parameter Drain Source Voltage Drain Gate Voltage (RGS U 1 MΩ) Gate Source Voltage Drain Current Total Power Dissipation Junction Temperature Storage Temperature Range Continuous Pulsed Continuous Pulsed Symbol VDSS VDGR VGSS ID Ptot Tj TStg Characteristics at Ta = 25℃ Parameter Drain Source Breakdown Voltage at ID = 10 µA Zero Gate Voltage Drain Current at VDS = 60 V Gate Source Leakage Current at ± VGS = 20 V Gate Source Threshold Voltage at VDS = VGS = 10 V, ID = 250 µA Static Drain Source On Resistance at VGS = 5 V, ID = 50 m A at VGS = 10 V, ID = 500 m A Drain Source On Voltage at VGS = 5 V, ID = 50 m A at VGS = 10 V, ID = 500 m A Forward Transconductance at VDS = 10 V, ID = 200 m A Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz Turn On Time at VDD = 30V, RL = 150Ω, ID = 0.2A, VGS = 10V, RGEN = 25Ω Turn Off Time at VDD = 30V, RL = 150Ω, ID = 0.2A, VGS = 10V, RGEN = 25Ω Symbol BVDSS IDSS ±IGSS VGS(th) RDS(ON) VDS(ON) g FS Ciss Coss Crss ton toff Value 60 60 ± 20 ± 40 115 800 200 - 55 to + 150 Min. Max. - - - 100 - 7.5 - 7.5 - 1.5 -...