Datasheet Summary
Chip Integration Technology Corporation
60V N-Channel MOSFET
N-Channel MOSFET
- ESD Protected
Features
:
- Simple Drive Requirement
- Small Package Outline
- ROHS pliant
- ESD Rating = 2000V HBM
Applications:
- High density cell design for low RDS(ON)
- Voltage controlled small signal switching.
- Rugged and reliable.
- High saturation current capability.
- High-speed switching.
- Not thermal runaway.
- The soldering temperature and time shall not exceed 260℃ for more than 10 seconds.
(SOT-23) Top View
GENERAL DESCRIPTION
The 2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high...