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2N7002D Datasheet PDF

CITC 2N7002D

The 2N7002D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in
Part No. 2N7002D
Datasheet 2N7002D Download
Manufacturer
CITC
Description 60V N-Channel MOSFET
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2N7002D datasheet page 1 preview

FEATURES

:
● Simple Drive Requirement
● Small Package Outline
● ROHS Compliant
● ESD Rating = 2000V HBM

APPLICATIONS

:
● High density cell design for low RDS(ON)
● Voltage controlled small signal switching.
● Rugged and reliable.
● High saturation current capability.
● High-speed switching.
● Not thermal runaway.
● The soldering temperature and time shall not exceed 260℃ for more than 10 seconds. (SOT-23) Top View

GENERAL DESCRIPTION

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