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2N7002KW - N-channel MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Pb Free/RoHS Compliant.
  • ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S G SOT-323 Marking : 7KW Absolute Maximum Ratings.
  • TA = 25°C unless otherwise noted Symbol Parameter Value Units VDSS VGSS ID Drain-Source Voltage Gate-Source Volt.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002KW — N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free/RoHS Compliant • ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S G SOT-323 Marking : 7KW Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol Parameter Value Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous TJ = 100°C - Pulsed 60 ±20 310 195 1.