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2N7002W - N-channel MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Lead Free/RoHS Compliant D G SOT - 323 Marking : 2N S Absolute Maximum Ratings.
  • Ta = 25°C unless otherwise noted Symbol Parameter Value VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Continuous Pulsed 60 60 ±20 ±40 ID Drain Cur.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002W — N-Channel Enhancement Mode Field Effect Transistor October 2007 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant D G SOT - 323 Marking : 2N S Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VDSS VDGR VGSS Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.