• Part: 2N7002W
  • Description: N-Channel Power Mosfet
  • Manufacturer: Galaxy Microelectronics
  • Size: 237.86 KB
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Datasheet Summary

Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W Features - Low On-Resistance。 - Low Gate Threshold Voltage. - Low Input Capacitance. - Fast Switching Speed. - Low Input/Output Leakage. Pb Lead-free APPLICATIONS - N-channel enhancement mode effect transistor. - Switching application. ORDERING INFORMATION Type No. Marking SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage VDGR VGSS ID PD Drain-Gate voltage(RGS≤1MΩ) Gate -Source voltage - continuous -Non Repetitive (tp<50μs) Maximum Drain current -continuous -Pulsed Power...