Galaxy Century Microelectronics 2N7002W
N-Channel Power Mosfet
| Part No. | 2N7002W |
|---|---|
| Datasheet | 2N7002W Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | N-Channel Power Mosfet |
| Buy | Stock & Price |
FEATURES
● Low On-Resistance。● Low Gate Threshold Voltage.
● Low Input Capacitance.
● Fast Switching Speed.
● Low Input/Output Leakage. Pb Lead-free
APPLICATIONS
● N-channel enhancement mode effect transistor.● Switching application. ORDERING INFORMATION Type No. Marking 2N7002W 7002 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 60 VDGR VGSS ID PD Drain-Gate voltage(RGS≤1MΩ) Gate -Source voltage - continuous -Non Repetitive (tp<50μs) Maximum Drain current -continuous -Pulsed Power Dissipation 60 ±20 ±40 115 800 200 RθJA Thermal resistance,Junction-to-Ambient 625 TJ, Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃/W ℃ F008 Rev.A 1 Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W ELECTRICAL
