2N7002LT1
2N7002LT1 is TMOS FET Transistor manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7002LT1/D
TMOS FET Transistor
N- Channel Enhancement
3 DRAIN 1 GATE
Motorola Preferred Device
2 SOURCE
MAXIMUM RATINGS
Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Drain Current
- Continuous TC = 25°C(1) Drain Current
- Continuous TC = 100°C(1) Drain Current
- Pulsed(2) Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 µs) Symbol VDSS VDGR ID ID IDM VGS VGSM Value 60 60 ± 115 ± 75 ± 800 ± 20 ± 40 Unit Vdc Vdc mAdc
1 2
CASE 318
- 08, STYLE 21 SOT- 23 (TO
- 236AB)
Vdc Vpk
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board,(3) TA = 25°C Derate above 25°C...
