| Part Number | 2N7002LT1 |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7002LT1/D
TMOS FET Transistor
N–Channel Enhancement
3 DRAIN 1 GATE
2N7002LT1
Motorola Preferred Device
3
2 SOURCE
MAXIMUM RATINGS
.
RKING
2N7002LT1 = 702
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain *Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate *Body Leakage Current, Forward (VGS = 20. |
2N7002LT1 Datasheet
The 2N7002LT1 is a TMOS FET Transistor.
| Part Number | 2N7002LT1 |
|---|---|
| Description | Small Signal MOSFET |
| Manufacturer | Leshan Radio Company |
| Overview |
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current –.
≤ 2.0%. 3. FR *5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. L2N7002LT1 3 1 2 CASE 318, STYLE 21 SOT * 23 (TO *236AB) 115 mAMPS 60 VOLTS R DS(on) = 7.5 W N - Channel 3 1 2 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 702 W 12 Gate Source 702 = Device Code W = Work Week ORDE. |
| Part Number | 2N7002LT1 |
|---|---|
| Description | Small Signal MOSFET |
| Manufacturer | onsemi |
| Overview |
2N7002LT1
Preferred Device
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current – .
≤ 2.0%. 3. FR *5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. http://onsemi.com 115 mAMPS 60 VOLTS RDS(on) = 7.5 W N *Channel 3 1 2 3 1 2 SOT *23 CASE 318 STYLE 21 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 702 W 12 Gate Source 702 = Device Code W = Work Week ORDERING. |