2N7002LT1 Overview
The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. FR 5 = 1.0 x 0.75 x 0.062 in.
| Part number | 2N7002LT1 |
|---|---|
| Datasheet | 2N7002LT1-ONSemiconductor.pdf |
| File Size | 63.02 KB |
| Manufacturer | onsemi |
| Description | Small Signal MOSFET |
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The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. FR 5 = 1.0 x 0.75 x 0.062 in.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N7002LT1 | TMOS FET Transistor | Motorola Inc |
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2N7002LT1 | Small Signal MOSFET | Leshan Radio Company |
| DCY | 2N7002LT1G | Small Signal MOSFET | DCY |
| Part Number | Description |
|---|---|
| 2N7002L | N-Channel MOSFET |
| 2N7002 | N-channel FET |
| 2N7002DW | N-Channel FET |
| 2N7002E | Small Signal MOSFET |
| 2N7002K | Small-Signal MOSFET |
| 2N7002KW | N-Channel FET |
| 2N7002T | N-Channel FET |
| 2N7002W | Small Signal MOSFET |
| 2N7000 | N-Channel MOSFET |
| 2N7000BU | Advanced Small-Signal MOSFET |