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2N7002LT1
Preferred Device
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.)
VDSS
VDGR
ID ID IDM
60
60
±ā115 ±ā75 ±ā800
Vdc Vdc mAdc
Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
VGS VGSM
±ā20 ±ā40
Vdc Vpk
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C Derate above 25°C
PD 225 mW 1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C
RθJA PD
556 °C/W
300 mW mW/°C
2.
2N7002LT1 Datasheet
