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2N7002W - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 0.34 A (VGS = 10V).
  • RDS(ON) ＜ 1.6Ω (VGS = 10V).
  • RDS(ON) ＜ 2.5Ω (VGS = 4.5V).
  • ESD Protected 1 Gate 2 Source 3 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current ( Steady State) Continuous Drain Current ( t < 5 s) Pulsed Drain Current (tp = 10 us) Gate.
  • Source ESD Rating Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Case Lea.

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SMD Type N-Channel MOSFET 2N7002W MOSFET ■ Features ● VDS (V) = 60V ● ID = 0.34 A (VGS = 10V) ● RDS(ON) ＜ 1.6Ω (VGS = 10V) ● RDS(ON) ＜ 2.5Ω (VGS = 4.5V) ● ESD Protected 1 Gate 2 Source 3 Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current ( Steady State) Continuous Drain Current ( t < 5 s) Pulsed Drain Current (tp = 10 us) Gate−Source ESD Rating Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Lead Temperature for Soldering Purposes Junction Temperature Storage Temperature Range Ta=25℃ Ta=85℃ Ta=25℃ Ta=85℃ Steady State t<5s Steady State t≤5s Symbol VDS VGS ID IDM ESD PD RthJA RthJC TL TJ Tstg Rating 60 ±20 310 220 340 240 1.