2N7002TE Datasheet | Kexin Semiconductor

Features - VDS (V) = 60V - ID = 0.29 A - RDS(ON) ＜ 2Ω (VGS = 20V) - RDS(ON) ＜ 7.5Ω (VGS = 5V) N-Channel MOSFET 2N7002TE SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 MOSFET Unit:mm 0.15±0.05 0.55 (REF.) 0.8±0.1 +0.15 1.6 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 +0.1 0.8 -0.1 1. Gate 2. Source 3. Drain - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD Rth JA TJ Tstg Rating 60 ±20 0.29 1.2 150 833 150 -55 to 150 Unit V A m W ℃/W ℃ - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On)...