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2N7002TE - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 0.29 A.
  • RDS(ON) ＜ 2Ω (VGS = 20V).
  • RDS(ON) ＜ 7.5Ω (VGS = 5V) N-Channel MOSFET 2N7002TE SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 MOSFET Unit:mm 0.15±0.05 0.55 (REF. ) 0.8±0.1 +0.15 1.6 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 +0.1 0.8 -0.1 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissi.

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SMD Type ■ Features ● VDS (V) = 60V ● ID = 0.29 A ● RDS(ON) ＜ 2Ω (VGS = 20V) ● RDS(ON) ＜ 7.5Ω (VGS = 5V) N-Channel MOSFET 2N7002TE SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 MOSFET Unit:mm 0.15±0.05 0.55 (REF.) 0.8±0.1 +0.15 1.6 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 +0.05 0.75 -0.05 +0.1 0.8 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 60 ±20 0.29 1.