2N7002W-G Datasheet | Comchip Technology

Features -High density cell design for low R DS(ON) . -Voltage control small signal switch. -Rugged and reliable. -High saturation current capability. 0.054(1.35) 0.045(1.15) 0.087(2.20) 0.070(1.80) SOT-323 Marking: K72 Equivalent Circuit 0.044(1.10) 0.035(0.90) 0.056(1.40) 0.047(1.20) 0.006(0.15) 0.002(0.05) 0.087(2.20) 0.078(2.00) G : Gate S : Source D : Drain 0.016(0.40) 0.008(0.20) 0.004(0.10)max 0.004(0.10)min Dimensions in inches and (millimeter) Electrical Ratings (at T A =25 C unless otherwise noted) Parameter Drain-Source voltage Drain current Power dissipation .. Symbol V DS ID PD T J , T STG Value 60 115 225 -55 to +150 Unit V m A m W Junction and storage temperature range Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Drain-Source breakdown voltage V GS =0V, I D =3m A Gate-Threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Drain-Source on resistance V GS =5V, I D =50m A Forward trans conductance Drain-source on-voltage V GS =5V, I D =50m A Diode forward voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time V DD =25V, R L =50Ω, I D =500m A, V GEN =10V, R G =25Ω V DS =25V, V GS =0V, f=1MHz I S =115m A, V GS =0V V SD C iss C oss C rss t d(on) t d(off) V DS =10V, I D =200m A V GS =10V, I D =500m A V DS(ON) 0.375 1.2 50 25 5 20 n S 40 REV:A Conditions V GS =0V, I D...