Galaxy Century Microelectronics 2N7002W
N-channel MOSFET
| Part No. | 2N7002W |
|---|---|
| Datasheet | 2N7002W Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
z z z z z Low On-Resistance。 Low Gate Threshold Voltage. Low Input Capacitance. Fast Switching Speed. Low Input/Output Leakage. Pb Lead-freeAPPLICATIONS
z z N-channel enhancement mode effect transistor. Switching application. SOT-323 ORDERING INFORMATION Type No. 2N7002W Marking 7002 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VDSS VDGR VGSS ID PD RθJA TJ, Tstg Parameter Drain-Source voltage Drain-Gate voltage(RGS≤1MΩ) Gate -Source voltage - continuous -Non Repetitive (tp<50μs) Maximum Drain current -continuous -Pulsed Value 60 60 ±20 ±40 115 800 200 625 -55 to +150 Units V V V mA mW ℃ /W ℃ Power Dissipation Thermal resistance,Junction-to-Ambient Junction and Storage Temperature F008 Rev.A 1 Free Datasheet Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002WELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-body Leakage Forward Re...
