Kexin Electronics 2N7002T
N-Channel MOSFET
FEATURES
● VDS (V) = 60V● ID = 115mA
● RDS(ON) < 5Ω (VGS = 10V)
● RDS(ON) < 7Ω (VGS = 5V) SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 2 1 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 + 1.6 0.15 -0.15 0.36±0.1 3 0.5 +0.1 -0.1 0.3±0.05 + 0.75 0.05 -0.05 + 0.8 0.1 -0.1 1. Gate 2. Source 3. Drain
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃● Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID PD RthJA TJ Tstg Rating 60 ±20 115 150 833 150 -55 to 150 Unit V mA mW ℃/W ℃
●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(On) On State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-Off DelayTime ID(ON)...