2N7002T
2N7002T is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 60V
- ID = 115m A
- RDS(ON) ＜ 5Ω (VGS = 10V)
- RDS(ON) ＜ 7Ω (VGS = 5V)
SOT-523
1.6 +0.1 -0.1
1.0 +0.1 -0.1
0.2 +0.05 -0.05
U nit: m m 0.15±0.05
0.55 (REF.)
0.8±0.1
+ 1.6 0.15 -0.15
0.36±0.1
3 0.5 +0.1
-0.1
0.3±0.05
+ 0.75 0.05 -0.05 + 0.8 0.1 -0.1
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings Ta = 25℃
- Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range
Symbol VDS VGS ID PD Rth JA TJ Tstg
Rating 60
±20 115 150 833 150 -55 to 150
Unit V m A m W ℃/W ℃
- Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage
Symbol VDSS IDSS IGSS VGS(th)
Static Drain-Source On-Resistance
RDS(On)
On State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time
ID(ON) g FS Ciss Coss Crss td(on) td(off)
Drain-source on-voltage
VDS(on)
Diode Forward Voltage
Test Conditions ID=250μA, VGS=0V VDS=60V, VGS=0V VDS=0V, VGS=±20V VDS=VGS , ID=250μA VGS=10V, ID=500m A VGS=5V, ID=50m A VGS=10V, VDS=7V VDS=10V, ID=0.2A
VGS=0V, VDS=25V,...
