! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability
2N7002MTF
BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA
SOT-23
Product Summary
Part Number 2N7002 BVDSS 60V RDS(on) 5.0Ω ID 115mA
1.Gate 2. Source 3. Drain
Absolute Maximum Ratings
Symbol VDSS ID IDM
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Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drai.
N-Channel Enhancement Mode Field Effect Transistor
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N-Channel Small Signal MOSFET
FEATURES
! Lower RDS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability
2N7002MTF
BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA
SOT-23
Product Summary
Part Number 2N7002 BVDSS 60V RDS(on) 5.0Ω ID 115mA
1.Gate 2. Source 3. Drain
Absolute Maximum Ratings
Symbol VDSS ID IDM
www.DataSheet4U.com
Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range
①
Value 60 115 73 800 ±20 0.2 1.