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2N7002VA - DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Download the 2N7002VA datasheet PDF. This datasheet also covers the 2N7002V variant, as both devices belong to the same dual n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Lead Free By Design/RoHS Compliant (Note 2).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • "Green" Device (Note 3 and 4) Mechanical Data.
  • Case: SOT-563.
  • Case Material: Molded Plastic. “Green” Molding Compo.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N7002V_DiodesIncorporated.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Not Recommended for New 2N7002V/VA Design, Use 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • "Green" Device (Note 3 and 4) Mechanical Data • Case: SOT-563 • Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Alloy 42 or Copper leadframe.