2N7002V
FEATURE
∙ Dual N-channel MOSFET ∙ Low on-resistance ∙ Low gate threshold voltage ∙ Low input capacitance ∙ Fast switching speed ∙ Low input/output leakage
MARKING
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VDS VGS ID PD TJ Tstg
Parameter Drain-Source voltage Gate-Source voltage Drain Current Power Dissipation Junction Temperature Storage Temperature
Value 60
±20 115 150 150 -55-150
Unit V V m A m W ℃ ℃
.cj-elec.
G,Sep,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Pa rameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING TIME Turn-on Time
Turn-off Time
Symbol V(BR)DSS Vth(GS) l GSS IDSS ID(ON) r DS(0n)...
