Full PDF Text Transcription for 2N7002X (Reference)
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2N7002X. For precise diagrams, and layout, please refer to the original PDF.
BR)DSS 60 V MOSFET( N-Channel ) RDS(on)MAX 5Ω@10V 7Ω@5V ID 115mA SOT-89-3L 1.GATE 2. DRAIN 3. SOURCE FEA TURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability MARKING APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate -Source Voltage ID Drain Current PD Power Dissipation TJ Junction Temperature TSTG Storage Temperature RθJA Thermal Resistance from Junction to Ambient www.cj-elec.