Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encap sulate MOSFETS
V(BR)DSS
60 V
MOSFET( N-Channel )
RDS(on)MAX
5Ω@10V
7Ω@5V
115mA
SOT-89-3L
1.GATE 2. DRAIN 3. SOURCE
FEA TURES z High density cell design for low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
MARKING
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted )
Symbol
Parameter
Drain-Source Voltage
Gate -Source Voltage
Drain Current
Power Dissipation
Junction Temperature
TSTG
Storage Temperature
RθJA
Thermal Resistance...
