JCET 2N7002X
N-Channel MOSFET
| Part No. | 2N7002X |
|---|---|
| Datasheet | 2N7002X Download |
| Manufacturer |  JCET |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate -Source Voltage ID Drain Current PD Power Dissipation TJ Junction Temperature TSTG Storage Temperature RθJA Thermal Resistance from Junction to Ambient 1 Value 60 ±20 115 500 150 -55~+150 250 Unit V V mA mW ℃ ℃ ℃/W H,Sep,2016 MOSFETELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=250µA 60 Gate-threshold voltage* V(GS)th VDS=VGS, ID=250µA 1 Gate-body leakage lGSS VDS=0V, VGS= ±20 V Zero gate voltage drain current Drain-source on-resistance* IDSS RDS(on) VDS=60V, VGS=0V VGS=10V, ID=500mA VGS=5V, ID=50mA Forward tranconductance* Drain-source on-voltage Diode forward voltage* Turn-on time ** Turn-off time ** gfs VDS(on) VSD td(on) td(off) VDS=10V, ID=200mA VGS=10V, ID=500mA VGS=5V, ID=50mA IS=115mA,VGS=0V VDD=25V,RL=50 Ω ,ID=500mA, VGEN=10V,RG=25 Ω 80 0.5 0.05 0.55 Input capacitance** Out...
