Kexin Electronics 2N7002
N-Channel Enhancement MOSFET
| Part No. | 2N7002 |
|---|---|
| Datasheet | 2N7002 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 2N7002 +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1ABSOLUTE MAXIMUM RATINGS
Ta=25 Parameter Drain-Source voltage Drain Current Power Dissipation Junction Temperature Storage TemperatureELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-threshold voltage Drain-source on-resistance On-state drain current Forward tran conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on Time Turn-off Time Drain-source on-voltage Diode forward voltage Marking Marking 702. Symbol Rating Unit VDS 60 V ID 115 mA PD 225 mW TJ 150 Tstg -55 to 150 0-0.1 +0.1 0.38 -0.1 1.1BaGsAeTE 2.2EmSiOtUtReCrE 3.3coDlRlAeIcNtor Symbol VDSS IDSS lGSS VGS(th) rDS(0n) ID(on)...