High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability
2N7002
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
1
2
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
0.55
0.4
Unit: mm 0.1 +0.05
-0.01
+0.1 0.97 -0.1
Absolute Maximum Ratings Ta=25
Parameter Drain-Source voltage Drain Current Power Dissipation Junction Temperature Storage Temperature
Electrical Characteristics Ta = 25
Parameter Drain-source brea.
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SMD Type
MOSFET
N-Channel Enhancement MOSFET
Features
High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability
2N7002
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
1
2
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
0.55
0.4
Unit: mm 0.1 +0.05
-0.01
+0.1 0.97 -0.