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2N7002 - N-Channel Enhancement MOSFET

Key Features

  • High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 2N7002 +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 Absolute Maximum Ratings Ta=25 Parameter Drain-Source voltage Drain Current Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta = 25 Parameter Drain-source brea.

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SMD Type MOSFET N-Channel Enhancement MOSFET Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 2N7002 +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.