2N7002 Datasheet | Nexperia

2N7002 60 V, 300 mA N-channel Trench MOSFET Rev. 7 - 8 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits - Suitable for logic level gate drive sources - Very fast switching - Surface-mounted package - Trench MOSFET technology 1.3 Applications - Logic level translators - High-speed line drivers 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C VGS = 10 V; Tsp = 25 °C; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2 VGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure 6; see Figure 8 2. Pinning information Min Typ Max Unit - - 60 V - - 300 mA - - 0.83 W - 2.8 5...