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2N7002 Datasheet

The 2N7002 is a N-Channel 60V MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number2N7002
ManufacturerVishay
Overview 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) 2N7000 2N7002 VQ1000J VQ1000P BS170 5 @ VGS = 10 V 7.5 @ . D Low On-Resistance: 2.5 W D Low Threshold: 2.1 V D Low Input Capacitance: 22 pF D Fast Switching Speed: 7 ns D Low Input and Output Leakage BENEFITS D Low Offset Voltage D Low-Voltage Operation D Easily Driven Without Buffer D High-Speed Circuits D Low Error Voltage APPLICATIONS D Direct Logic-Le.
Part Number2N7002
DescriptionN-Channel Enhancement Mode Power MOSFET
ManufacturerRectron
Overview 2N7002 N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 2300V High power and current handing capability Lead . VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating HBM 2300V High power and current handing capability Lead free product is acquired Surface mount package Schematic diagram Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers,displ.
Part Number2N7002
DescriptionN-channel FET
Manufactureronsemi
Overview These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance.
* High Density Cell Design for Low RDS(on)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
* ESD Protection Level: HBM > 100 V, CDM > 2 kV
* This Device is Pb−Free and Halogen Free DATA SHEET www.onsemi.com D G S 123 TO−92 CASE 135AN 1 2 3 1 − .
Part Number2N7002
DescriptionN-Channel Power Mosfet
ManufacturerGalaxy Microelectronics
Overview Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002 FEATURES  High Density Cell Design For Low Pb RDS(ON). Lead-free  Voltage Controlled Small Signal Switch. .
* High Density Cell Design For Low Pb RDS(ON). Lead-free
* Voltage Controlled Small Signal Switch.
* Rugged and Reliable.
* High Saturation Current Capability.
* MSL 1 APPLICATIONS
* N-channel enhancement mode effect transistor.
* Switching application. SOT-23 ORDERING INFORMATION Type.

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