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2N7002B - N-channel MOSFET

Key Features

  • ESD rating: 2000V (HBM).
  • Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V.
  • High power and current handling capability.
  • Very fast switching.
  • RoHS compliant device.

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Datasheet Details

Part number 2N7002B
Manufacturer KODENSHI KOREA
File Size 238.63 KB
Description N-channel MOSFET
Datasheet download datasheet 2N7002B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 2000V (HBM)  Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V  High power and current handling capability  Very fast switching  RoHS compliant device Applications  High speed line driver SOT-23 Ordering Information Part Number Marking Code Package Packaging 2N7002B 7B2 □ SOT-23 Tape & Reel Marking Information 7B2 □ 7B2 = Specific Device Code □ = Year & Week Code Marking Absolute Maximum Ratings (Tamb=25℃, Unless otherwise specified) Characteristic Symbol Drain-Source voltage Gate-Source voltage Maximum drain current (Note 1) Pulsed drain current (Note 1) Power dissipation (Note 2) Operating junction temperature Storage temperature range Thermal resistance junction to ambient