Datasheet Summary
83B
60 V, single N-channel Trench MOSFET
Rev. 2
- 13 June 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
T8
1.2 Features and benefits
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV
- Logic-level patible
- Ultra thin package profile with 0.37 mm height
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter...
