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2N7002 - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

General Description

and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal

for high-efficiency power-management applications.

Motor controls

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface-Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www. diodes. com/quality/product-definitions/.
  • An automotive-compliant part is available under.

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Other Datasheets by Diodes Incorporated

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2N7002A N-channel MOSFET
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2N7002DWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 60V RDS(ON) Max 5Ω @ VGS = 10V 7.5Ω @ VGS = 5V ID Max TA = +25°C 210mA 170mA Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface-Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.