2N7002V
2N7002V is DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR manufactured by Diodes Incorporated.
Features
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package
- Lead Free By Design/Ro HS pliant (Note 2)
- Qualified to AEC-Q101 Standards for High Reliability
- "Green" Device (Note 3 and 4)
Mechanical Data
- Case: SOT-563
- Case Material: Molded Plastic. “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020D
- Terminal Connections: See Diagram
- Terminals: Finish
- Matte Tin annealed over Alloy 42 or Copper leadframe. Solderable per MIL-STD-202, Method 208
- Terminals: Lead bearing terminal plating available. See
Ordering Information Page 3, Note 8
- Marking Information: See Page 3
- Ordering Information: See Page 3
- Weight: 0.006 grams (approximate)
SOT-563
D2
G1
S1
D2
S1
G1
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage
Drain Current (Note 1) Drain Current (Note 1)
Continuous Pulsed Continuous
Pulsed
S2
G2
D1...
