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2N7002V - DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • Lead Free By Design/RoHS Compliant (Note 2).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • "Green" Device (Note 3 and 4) Mechanical Data.
  • Case: SOT-563.
  • Case Material: Molded Plastic. “Green” Molding Compo.

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Other Datasheets by Diodes Incorporated

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2N7002VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002-01 N-channel FET
2N7002DW DUAL N-CHANNEL MOSFET
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2N7002T N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Not Recommended for New 2N7002V/VA Design, Use 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • "Green" Device (Note 3 and 4) Mechanical Data • Case: SOT-563 • Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Alloy 42 or Copper leadframe.