Full PDF Text Transcription for 2N7002Q (Reference)
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2N7002Q. For precise diagrams, and layout, please refer to the original PDF.
Product Summary BVDSS 60V RDS(ON) Max 5Ω @ VGS = 10V 7.5Ω @ VGS = 5V 2N7002Q N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ID Max TA = +25°C 210mA 170mA Features and...
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ODE FIELD EFFECT TRANSISTOR ID Max TA = +25°C 210mA 170mA Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Notes 3) • The 2N7002Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Description and Applications This MOSFET is designed to meet the stringe
2N7002Q Datasheet
