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2N7002Q - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

Motor Control Power Management Functions Mechanical Data Case: SOT23 Case Materia

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Notes 3).
  • The 2N7002Q is suitable for automotive.

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Datasheet Details

Part number 2N7002Q
Manufacturer DIODES
File Size 361.13 KB
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Datasheet download datasheet 2N7002Q Datasheet
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Full PDF Text Transcription

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Product Summary BVDSS 60V RDS(ON) Max 5Ω @ VGS = 10V 7.5Ω @ VGS = 5V 2N7002Q N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ID Max TA = +25°C 210mA 170mA Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Notes 3) • The 2N7002Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.
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