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2N7002K - N-channel MOSFET

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Features

  • z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected up to 2KV Marking: 72K MOSFET.

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Datasheet Details

Part number 2N7002K
Manufacturer JCST
File Size 327.13 KB
Description N-channel MOSFET
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    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected up to 2KV Marking: 72K MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 340 mA PD Power Dissipation 0.35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance fromJunction to Ambient 357 ℃ /W SOT-23 1. GATE 2. SOURCE 3.
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