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2N7002K - N-channel MOSFET

Key Features

  • RDS(ON), VGS@10V, IDS@500mA=3.
  • RDS(ON), VGS@4.5V, IDS@200mA=4.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Very Low Leakage Current In Off Condition.
  • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers：Relays, Displays, Lamps, Solenoids, Memories, etc.
  • ESD Protected 2KV HBM.
  • In compliance with EU RoHS 2002/95/EC directives.

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2N7002KDW Dual N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 2N7002K 0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  RDS(ON), VGS@10V, IDS@500mA=3  RDS(ON), VGS@4.5V, IDS@200mA=4  Advanced Trench Process Technology  High Density Cell Design For Ultra Low On-Resistance  Very Low Leakage Current In Off Condition  Specially Designed for Battery Operated Systems, Solid-State Relays Drivers：Relays, Displays, Lamps, Solenoids, Memories, etc.  ESD Protected 2KV HBM  In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA  Case: SOT-23 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.008 gram MARKING K72 SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.