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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V.(Human Body Model) High density cell design for low RDS(ON). Voltage controlled small signal switch.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed (Note 1)
Drain Power Dissipation (Note 2)
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient (Note 2)
VDSS VGSS
ID IDP PD Tj Tstg RthJA
60 20 300 1000 270 150 -55 150 460
V V mA mW
/W
Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Surface Mounted on 2 2 FR4 Board
C L
A J G
2N7002KU
N Channel MOSFET
E MB 2 1
NK
M
DIM MILLIMETERS
DA B
2.00+_ 0.20 1.25+_ 0.15
C 0.90+_ 0.10 3
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.
2N7002KU Datasheet
