KEC 2N7000A
MOSFET
| Part No. | 2N7000A |
|---|---|
| Datasheet | 2N7000A Download |
| Manufacturer |  KEC |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
High density cell design for low RDS(ON). Voltage controolled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Drain-Source Voltage Drain-Gate Voltage (RGS 1 ) Gate-Source Voltage Drain Current Continuous Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VDSS VDGR VGSS ID IDP PD Tj Tstg RATING 60 60 20 200 500 400 150 -55 150 UNIT V V V mA mW L M C 2N7000A N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00+_ 0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. SOURCE 2. GATE 3. DRAIN TO-92 EQUIVALENT CIRCUIT D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward BVDSS IDSS IGSSF Gate-Body Leakage, Reverse IGSSR TEST CONDITION VGS=0V, ID=10 A VDS=48V, VGS=0V VGS=15V, VDS=0V VGS=-15V, VDS=0V MIN.
