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2N7000 - N-Channel Enhancement Mode MOSFET

Key Features

  • s.
  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 1.Gate 2.E2m. Sittoerruce 3.co3l. lDecrtaorin.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source voltage VDS Gate-Source Voltage VGS.

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SMD Type MOSFET N-Channel Enhancement Mode MOSFET 2N7000 ■ Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 1.Gate 2.E2m.Sittoerruce 3.co3l.lDecrtaorin ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source voltage VDS Gate-Source Voltage VGS Drain Current - Continuous ID - Pulsed Note(1) Power dissipation @ TA = 25℃ PD Operating and storage junction temperature range TJ, Tstg Notes: 1. Pulse width limited by maximum junction temperature. Rating Unit 60 V ±20 V 200 mA 500 0.