2N7000 Datasheet | KEC

FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed(Note 1) Drain Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj Storage Temperature Range Tstg Note 1) Pulse Width 10 , Duty Cycle 1% RATING 60 20 500 2000 625 150 -55 150 UNIT V V m A m W N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR KE G 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00+_ 0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. SOURCE 2. GATE 3. DRAIN TO-92 EQUIVALENT CIRCUIT PLEASE HANDLE WITH CAUTION. THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source...