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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed(Note 1)
Drain Power Dissipation
Junction Temperature
VDSS VGSS
ID IDP PD Tj
Storage Temperature Range
Tstg
Note 1) Pulse Width 10 , Duty Cycle 1%
RATING 60 20 500 2000 625 150
-55 150
UNIT V V
mA
mW
L M
C
2N7000
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00+_ 0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. SOURCE 2. GATE 3.
2N7000 Datasheet
