2N7000 - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-92 package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

2N7000 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2N7000
Manufacturer	Inchange Semiconductor
File Size	195.53 KB
Description	N-Channel MOSFET
Datasheet	2N7000 Datasheet

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2N7000 ·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 200 IDM Drain Current-Single Pulsed 1.3 PD Total Dissipation @TC=25℃ 350 Tj Max.