2N7000K Datasheet PDF

FEATURES

ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current Continuous Pulsed (Note 1) ID IDP Drain Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note 1) Pulse Width 10 , Duty Cycle 1% RATING 60 20 500 2000 625 150 -55 150 UNIT V V mA mW L M C 2N7000K N Channel MOSFET ESD Protected 2000V BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00+_ 0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. SOURCE 2. GATE 3. DRAIN TO-92 EQUIVALENT CIRCUIT D G S

ELECTRICAL CHARACTERISTICS

(Ta=25 ) CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-