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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Continuous Pulsed (Note 1)
ID IDP
Drain Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note 1) Pulse Width 10 , Duty Cycle 1%
RATING 60 20 500 2000 625 150
-55 150
UNIT V V
mA
mW
L M
C
2N7000K
N Channel MOSFET ESD Protected 2000V
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00+_ 0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1.
2N7000K Datasheet
