2N7000BU
2N7000BU is Advanced Small-Signal MOSFET manufactured by onsemi.
Description
These N- channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on- state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 m A DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low- voltage, low- current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- Fast Switching Times
- Improved Inductive Ruggedness
- Lower Input Capacitance
- Extended Safe Operating Area
- Improved High- Temperature Reliability
- This is a Pb- Free Device
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDSS Drain- to- Source Voltage
Continuous Drain Current (TC = 25°C)
200 m A
Continuous Drain Current
(TC = 100°C)
IDM VGS TJ, TSTG
Drain Current Pulsed (Note 1)
Gate- to- Source Voltage
Operating Junction and Storage Temperature Range
1000 m A
±30
- 55 to 150
°C
Maximum Lead Temperature for
Soldering Purposes,
1/8- inch from Case for 5 Seconds
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS (Note 2) (Values are at TA = 25°C unless otherwise...
