2N7000BU - Advanced Small-Signal MOSFET

onsemi

General Description

These N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance while providing rugged, reliable, and fast switching performance.

Key Features

Fast Switching Times.
Improved Inductive Ruggedness.
Lower Input Capacitance.
Extended Safe Operating Area.
Improved High.
Temperature Reliability.
This is a Pb.
Free Device.

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2N7000BU advanced small-signal mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	2N7000BU
Manufacturer	onsemi
File Size	214.96 KB
Description	Advanced Small-Signal MOSFET
Datasheet	2N7000BU Datasheet

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Part Number	Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Advanced Small-Signal 2N7000BU / 2N7000TA Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.