2N7000 Description
These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and...
2N7000 Key Features
- High Density Cell Design for Low RDS(on)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- ESD Protection Level: HBM > 100 V, CDM > 2 kV
- This Device is Pb-Free and Halogen Free
- Source 2
- Gate 3
- Gate 2
- Source 3