2N7000 Datasheet | onsemi

Description These N- channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on- state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low- voltage, low- current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features - High Density Cell Design for Low RDS(on) - Voltage Controlled Small Signal Switch - Rugged and Reliable - High Saturation Current Capability - ESD Protection Level: HBM > 100 V, CDM > 2 k V - This Device is Pb- Free and Halogen Free DATA SHEET .onsemi. TO- 92 CASE 135AN 1 2 3 - Source 2 - Gate 3 - Drain TO- 92 CASE 135AR MARKING DIAGRAM $Y&Z&3 2N 7000 $Y = onsemi Logo &Z = Assembly Plant Code &3 = Date Code 2N7000 = Specific Device Code 1 2 SOT- 23 CASE 318- 08 - Gate 2 - Source 3 - Drain MARKING DIAGRAM 702MG G 702 = Specific Device Code M = Date Code G = Pb- Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet.  Semiconductor ponents Industries, LLC,...